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MBR735 THRU MBR7100
7.5 AMPS. Schottky Barrier Rectifiers
Voltage Range 35 to 100 Volts Current 7.5 Amperes
Features
Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25"(6.35mm)from case
TO-220A
.185(4.70) .175(4.44) .412(10.5) MAX DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) .055(1.40) .045(1.14)
.113(2.87) .103(2.62)
PIN1 .16(4.06) .14(3.56)
2
.11(2.79) .10(2.54) .56(14.22) .53(13.46)
Mechanical Data
Cases: JEDEC TO-220A molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams
.037(0.94) .027(0.68)
.205(5.20) .195(4.95)
.025(0.64) .014(0.35)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBR MBR Type Number 735 745 Maximum Recurrent Peak Reverse Voltage VRRM 35 45 Maximum RMS Voltage 24 31 VRMS Maximum DC Blocking Voltage 35 45 VDC Maximum Average Forward Rectified Current I(AV) See Fig. 1
Peak Repetitive Forward Current (Square Wave, 20KHz) at Tc=105oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at (Note 2) IF=7.5A,Tc=25 IF=7.5A,Tc=125 IF=15A,Tc=25 IF=15A,Tc=125 Maximum Instantaneous Reverse Current @ Tc =25 at Rated DC Blocking Voltage (Note 1) @ Tc=125 Voltage Rate of Change (Rated VR) Typical Junction Capactance Maximum Thermal Resistance, (Note 3) Operating Junction Temperature Range Storage Temperature Range
MBR 750
50
35 50 7.5
MBR 760
60
42 60
MBR 790
90
63 90
MBR 7100
100
70 100
Units
V V V A A A
IFRM IFSM IRRM VF IR
Dv/dt Cj RJC RJA TJ TSTG 360 1.0
- 0.57 0.84 0.72
15.0 150 0.5
0.75 0.65 - - 0.92 0.82 - -
A
V mA mA V/uS pF /W
0.1 15.0
0.5 50 10,000 280 5.0 15.0 -65 to +150 -65 to +175
0.1
-
200
Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.
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RATINGS AND CHARACTERISTIC CURVES (MBR735 THRU MBR7100)
FIG.1- FORWARD CURRENT DERATING CURVE
10 175 RESISTIVE OR INDUCTIVE LOAD 8
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method
AVERAGE FORWARD CURRENT. (A)
150
125 100
6
4
75
2 MBR735-MBR745 MBR750-MBR7100 0 0 50 CASE TEMPERATURE. ( C)
o
50
25 100 150 1 10 NUMBER OF CYCLES AT 60Hz 100
40
FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
50 MBR735-MBR745 MBR750-MBR7100
INSTANTANEOUS FORWARD CURRENT. (A)
10
Tj=125 0C
10
Pulse Width=300 s 1% Duty Cycle 1 Tj=25 0C
INSTANTANEOUS REVERSE CURRENT. (mA)
Tj=125 0C 1
0.1
Tj=75 0C
0.1 MBR735-MBR745 MBR750-MBR760 MBR790-MBR7100
0.01
Tj=25 0C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 FORWARD VOLTAGE. (V) 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
4,000
Tj=25 0C f=1.0MHz Vsig=50mVp-p
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
100
1,000
TRANSIENT THERMAL IMPEDANCE. ( OC/W)
100
JUNCTION CAPACITANCE.(pF)
10
1
100
MBR735-MBR745 MBR750 & MBR760 MBR790-MBR7100 1.0 10 REVERSE VOLTAGE. (V)
40 0.1
0.1 0.01
0.1
1 T, PULSE DURATION. (sec)
10
100
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